This product is a high-performance 3D ceramic packaging substrate specifically designed for UVA front-side chips. Utilizing aluminum nitride material and DPC dam technology, it achieves exceptional thermal performance and reliable structural protection within a compact 3.9×3.9mm size. Through innovative three-dimensional structure design, it provides an ideal packaging solution for high-power UVA LEDs.
High thermal conductivity AlN ceramic (170-200 W/mK)
Optimized thermal path design effectively reduces junction temperature
Supports high current drive, ensuring stable light output
Monolithic dam formed by DPC process
Precise control of phosphor gel filling amount
Perfectly matches packaging requirements of front-side chips
Double-layer wiring design supports complex circuit layouts
High precision circuits (line width/space ≥50μm)
Excellent insulation performance and voltage endurance
Exceptional UV resistance performance
Matched CTE reduces interfacial stress
Operating temperature range: -40℃ to 150℃
Industrial UVA curing equipment
Medical UV therapy devices
Printing ink curing systems
3D printing photocuring equipment
Semiconductor manufacturing processes
Analytical instrument light sources
Q1: What improvements does this substrate offer compared to the first generation?
A1: Three main enhancements: approximately 15% better thermal performance, dam accuracy improved to ±0.05mm, and new anti-overflow design.
Q2: Is the substrate compatible with automatic placement process?
A2: Yes, the product design is fully compatible with automated placement equipment, providing accurate positioning marks and flat soldering surfaces.
Q3: What is the maximum power density it can withstand?
A3: With proper heat dissipation, it can support up to 5W/mm² power density.
Q4: Can the dam height be customized?
A4: We offer three standard heights: 0.2mm, 0.3mm, and 0.5mm, while also supporting custom specifications.
Q5: How is the insulation performance of the substrate?
A5: Breakdown voltage ≥2.5kV, volume resistivity >10¹⁴ Ω·cm, fully meeting high voltage application requirements.
This product is a high-performance 3D ceramic packaging substrate specifically designed for UVA front-side chips. Utilizing aluminum nitride material and DPC dam technology, it achieves exceptional thermal performance and reliable structural protection within a compact 3.9×3.9mm size. Through innovative three-dimensional structure design, it provides an ideal packaging solution for high-power UVA LEDs.
High thermal conductivity AlN ceramic (170-200 W/mK)
Optimized thermal path design effectively reduces junction temperature
Supports high current drive, ensuring stable light output
Monolithic dam formed by DPC process
Precise control of phosphor gel filling amount
Perfectly matches packaging requirements of front-side chips
Double-layer wiring design supports complex circuit layouts
High precision circuits (line width/space ≥50μm)
Excellent insulation performance and voltage endurance
Exceptional UV resistance performance
Matched CTE reduces interfacial stress
Operating temperature range: -40℃ to 150℃
Industrial UVA curing equipment
Medical UV therapy devices
Printing ink curing systems
3D printing photocuring equipment
Semiconductor manufacturing processes
Analytical instrument light sources
Q1: What improvements does this substrate offer compared to the first generation?
A1: Three main enhancements: approximately 15% better thermal performance, dam accuracy improved to ±0.05mm, and new anti-overflow design.
Q2: Is the substrate compatible with automatic placement process?
A2: Yes, the product design is fully compatible with automated placement equipment, providing accurate positioning marks and flat soldering surfaces.
Q3: What is the maximum power density it can withstand?
A3: With proper heat dissipation, it can support up to 5W/mm² power density.
Q4: Can the dam height be customized?
A4: We offer three standard heights: 0.2mm, 0.3mm, and 0.5mm, while also supporting custom specifications.
Q5: How is the insulation performance of the substrate?
A5: Breakdown voltage ≥2.5kV, volume resistivity >10¹⁴ Ω·cm, fully meeting high voltage application requirements.
